AO3160E 600v,0.04a n-channel mosfet general description product summary v ds @ t j,max 700v i d (at v gs =10v) 0.04a r ds(on) (at v gs =10v) < 500? r ds(on) (at v gs =4.5v) < 600? applications typical esd protection hbm class 2 symbol v ds v gs i dm dv/dt t j , t stg t l symbol t 10s steady-state steady-state r jl w/c i d 0.12 0.04 a 5 v/ns 1.39 w 0.03 0.89 p d v 3000 minimum order quantity 20 orderable part number package type gate-source voltage t a =25c ? logic level driving 4.5v ? esd protection ? rohs and halogen free compliant ? load switch 600 form parameter drain-source voltage AO3160E sot23a tape & reel absolute maximum ratings t a =25c unless otherwise noted v maximum units c units junction and storage temperature range -55 to 150 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds thermal characteristics parameter 300 c typical maximum t a =70c continuous drain current a,f peak diode recovery dv/dt power dissipation a t a =70c maximum junction-to-ambient a r ja maximum junction-to-ambient a maximum junction-to-lead c pulsed drain current b t a =25c c/w 70 90 63 80 c/w c/w 100 125 g d s top view bottom view d g s g s d AO3160E rev.1.0: may 2018 www.aosmd.com page 1 of 5 downloaded from: http:///
AO3160E symbol min typ max units 600 - - - 700 - bv dss / ?tj - 0.68 - v/ o c - - 1 - - 10 i gss - - 10 a v gs(th) gate threshold voltage 1.4 2 3.2 v - 176 500 ? - 178 600 ? g fs - 0.125 - s v sd - 0.76 1 v i s - - 0.04 a i sm - - 0.12 a c iss - 9.5 - pf c oss - 1.7 - pf c rss - 0.6 - pf r g - 20 - ? q g - 0.9 - nc q gs - 0.09 - nc q gd - 0.49 - nc t d(on) - 4 - ns t r - 5 - ns t d(off) - 13 - ns t f - 55 - ns t rr - 105 - ns q rr - 9.5 - nc applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. switching parameters v ds =40v, i d =0.016a v gs =10v, i d =0.016a v gs =0v, v ds =25v, f=1mhz a v ds =480v, t j =125c maximum body-diode pulsed current c v gs =0v, v ds =25v, f=1mhz v ds =0v, v gs =20v gate-body leakage current maximum body-diode continuous current input capacitance diode forward voltage dynamic parameters r ds(on) static drain-source on-resistance v gs =4.5v, i d =0.016a breakdown voltage temperature cofficient i d =250a, v gs =0v i dss zero gate voltage drain current v ds =600v, v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz bv dss drain-source breakdown voltage i d =250a, v gs =0v, t j =25c v reverse transfer capacitance v ds =5v , i d =8 a output capacitance forward transconductance i s =0.016a,v gs =0v i d =250a, v gs =0v, t j =150c body diode reverse recovery charge body diode reverse recovery time turn-off delaytime turn-off fall time v gs =10v, v ds =300v, i d =0.01a, r g =6 turn-on rise time turn-on delaytime i f =0.016a, di/dt=100a/ s, v ds =300v v gs =10v, v ds =400v, i d =0.01a total gate charge gate source charge gate drain charge a. the value of r qja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user's spec ific board design. b. repetitive rating, pulse width limited by juncti on temperature. c. the r qja is the sum of the thermal impedence from junction t o lead r qjl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max . e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s therm al resistance rating. rev.1.0: may 2018 www.aosmd.com page 2 of 5 downloaded from: http:///
AO3160E typical electrical and thermal characteristics 0 50 100 150 200 250 300 0 0.01 0.02 0.03 0.04 0.05 r ds(on) ( ) i d (a) figure 3: on-resistance vs. drain current and gate voltage 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =0.016a v gs =10v 0 5 10 15 20 25 30 0 2 4 6 8 10 i d (ma) v ds (volts) figure 1: on-region characteristics v gs =2.5v 2.6v 2.7v 10v 2.8v 3v 0.7 0.8 0.9 1 1.1 1.2 1.3 -100 -50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5: break down vs. junction temperature 0 0.01 0.02 0.03 0.04 0.05 0 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics v ds =40v 25 c rev.1.0: may 2018 www.aosmd.com page 3 of 5 downloaded from: http:///
AO3160E typical electrical and thermal characteristics 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0.1 1 10 100 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =400v i d =0.01a 0.0001 0.001 0.01 0.1 1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note e) 100 s 100ms 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 10ms 1s 10s 0 20 40 60 80 100 120 0.00001 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) t j(max) =150 c t a =25 c 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note e) d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =125 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p dm rev.1.0: may 2018 www.aosmd.com page 4 of 5 downloaded from: http:///
AO3160E - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev.1.0: may 2018 www.aosmd.com page 5 of 5 downloaded from: http:///
|
